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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor NPN:VOLTAGE 60 Volts PNP:VOLTAGE 15 Volts APPLICATION * Small Signal Amplifier . CHEMZ8PT CURRENT 150 mAmpere CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SOT-563) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Both the 2SC2412K & 2SA2018 in one package. * NPN / PNP Silicon Transistor 0.9~1.1 0.15~0.3 (3) (4) (1) (5) SOT-563 0.50 0.50 1.5~1.7 MARKING * Z8 1.1~1.3 0.5~0.6 0.09~0.18 CIRCUIT 3 1 1.5~1.7 4 6 Dimensions in millimeters SOT-563 2SC2412K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-07 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC DC Output current ICP Pc TSTG TJ power dissipation Storage temperature Junction temperature NOTE.1 -55 -1000 150 +150 150 mW O PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS MIN. - - MAX. -15 -12 -6 -500 UNIT V V V mA C C O Note 1. Single Pulse Pw=1ms 2SC2412K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=50uA IC=1mA IE=50uA IE=0; VCB=60V IC=0; VEB=7V VCE=6V IC=1mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO ICEO hFE VCEsat Cob fT MIN. 60 50 7 120 TYPE 2 180 MAX. 0.1 0.1 560 0.4 3.5 Volts pF MHz uA UNITS Volts Volts Volts 2SA2018 CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) Cob fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency CONDITIONS IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ MIN. TYP. - MAX. -12 V V V -100 -100 nA UNIT -15 -6 270 - -100 6.5 260 nA 680 -250 - - mV pF MHz RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SC2412K Typical Electrical Characteristics Fig.1 50 Grounded emitter propagation characteristics VCE=6V COLLECTOR CURRENT : IC (mA) Fig.2 100 Grounded emitter output characteristics 0.50mA mA 0.45 A 0.40m 35mA 0. 0.30mA 500 Fig.3 DC current gain vs. collector current (1) Ta=25OC Ta=25OC COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100 OC 25 C 55 OC DC CURRENT GAIN : hFE 80 200 60 0.25mA 0.20mA VCE=5V 3V 1V 100 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 50 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 20 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0.5 1 2 5 10 20 50 100 200 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (2) 500 Ta=100OC COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig. 5 Collector-emitter saturation voltage vs. collector current 0.5 Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V Ta=25 0.5 IC/IB=10 DC CURRENT GAIN : hFE 200 25OC -55OC 0.2 IC/IB=50 20 10 0.2 Ta=100OC 25OC -55OC 100 0.1 0.05 0.1 0.05 50 0.02 0.02 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Gain bandwidth product vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps) TRANSITION FREQUENCY : fT (MHz) Fig.8 Base-collector time constant vs. emitter current Ta=25OC f=32MHZ VCB=6V 500 Ta=25O VCE=6V 200 100 200 50 100 20 50 0.5 10 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) EMITTER CURRENT : IE (mA) RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SA2018 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 10 Ta=125 C Ta=25 C O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 Ta=125 C Ta=25 C 10 Ta=-40 C O O O 100 Ta=125 C O Ta=25 C O Ta=-40 C O 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SA2018 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) |
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